Setting local power domain timeout via temperature sensor systems and methods
US10957365B2 · kind B2 · utility
5Cited by
3References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2018 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Dec 22, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D30/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a local power domain configured to selectively provide or prevent power to a logic block of the memory device and a temperature sensor located on the semiconductor device. The semiconductor device may also include timeout circuitry to delay a power down of the local power domain by a timeout time based at least in part on temperature information from the temperature sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.