Method of performing programming operation and related memory device
US10957409B1 · kind B1 · utility
2Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Feb 17, 2020 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Feb 17, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of performing a programming operation to a three dimensional (3D) NAND memory device is disclosed. The method makes residual electrons trapped in storage regions of middle dummy memory cells of an unselected string of the 3D NAND memory device to be removed during the pre-charging phase, so as to reduce program disturb to an selected string which neighbors the unselected string.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.