Patent · US Active

Method for bonding by direct adhesion

US10957539B2 · kind B2 · utility

0Cited by
0References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 3, 2018
Grant dateMar 23, 2021
Priority date
Expiry dateFeb 24, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/67092
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A process includes the successive steps of: a) providing first and second substrates, each including a first surface and an opposite, second surface, lateral edges connecting the first and second surfaces, b) bonding the first substrate to the second substrate by direct bonding with the first surfaces of the first and second substrates so as to form a bonding interface (IC), and making the lateral edges of the first and second substrates hydrophobic on either side of the bonding interface (IC).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.