Patent · US Active

Spatially localized thermal interface materials

US10957622B2 · kind B2 · utility

0Cited by
6References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 19, 2019
Grant dateMar 23, 2021
Priority date
Expiry dateApr 29, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/15311
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device that includes a semiconductor substrate having a surface, the surface having several regions having different thermal and/or mechanical requirements; and a composite thermal interface material including several spatially localized thermal interface materials placed on the surface, each of the several thermal interface materials tailored to the different thermal and/or mechanical requirements of each of the regions. Also disclosed is a method of forming the composite thermal interface material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.