Package structure having conductive patterns with crystal grains copper columnar shape and method manufacturing the same
US10957645B1 · kind B1 · utility
0Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Sep 17, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Sep 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a metallization layer and a dielectric layer disposed on the metallization layer. The metallization layer has conductive patterns, where each of the conductive patterns includes crystal grains, the crystal grains each are in a column shape and include a plurality of first banded structures having copper atoms oriented on a (220) lattice plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.