Three dimensional semiconductor memory including pillars having joint portions between columnar sections
US10957710B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 23, 2020 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Jul 23, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor memory includes a plurality of conductors stacked with insulators being interposed therebetween and a pillar through the plurality of conductors. The pillar includes a first columnar section, a second columnar section, and a joint portion between the first columnar section and the second columnar section. The pillar comprises portions that cross the respective conductors and that each function as part of a transistor. The plurality of conductors include a first conductor. The first conductor is closest to the joint portion among the plurality of conductors through the second columnar section, and includes a bending portion formed along the joint portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.