Ferroelectric device with multiple polarization states and method of making the same
US10957711B2 · kind B2 · utility
6Cited by
6References
19Claims
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Key dates
| Filing date | Jan 31, 2020 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Jan 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric device includes a semiconductor channel region, a gate electrode, and a ferroelectric gate dielectric located between the channel region and the gate electrode, and including a plurality of ferroelectric gate dielectric portions having different structural defect densities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.