Magnetic random access memory (MRAM) structure with small bottom electrode

US10957738B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Pouya Hashemi · White Plains, US
• Bruce B. Doris · Brewster, US
• Chandrasekharan Kothandaraman · New York, US
• Nathan P. Marchack · White Plains, US

Key dates

• Filing date: Apr 3, 2019
• Grant date: Mar 23, 2021
• Expiry date: Apr 3, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A semiconductor structure and fabrication method of forming a semiconductor structure. The structure is a MRAM element having a first conductive electrode embedded in a first interconnect dielectric material layer upon which a multi-layered magnetic tunnel junction (MTJ) memory element is formed in a magnetoresistive random access memory (MRAM) device area. The first conductive electrode includes a first end having a top surface of a first surface area and a second end having a bottom surface of a second surface area, the first surface area being smaller than the second surface area. The second end of the bottom electrode includes a barrier liner material including a metal fill material, and the first end of the bottom electrode is a pillar structure formed as a result of an etchback process in which the metal barrier liner is recessed relative to the metal fill material.