Patent · US Active

Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

US10957767B2 · kind B2 · utility

0Cited by

5References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Nico Caspary · Munich, DE
Helmut Oefner · Zorneding, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Jan 27, 2020
Grant date	Mar 23, 2021
Priority date	—
Expiry date	Jan 27, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/834
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of manufacturing is provided that includes providing an n-type silicon wafer, the n-type silicon wafer including n-type dopants partially compensated 20% to 80% by p-type dopants, where a net n-type doping concentration of the n-type silicon wafer is in a range from 1×1013 cm−3 to 1×1015 cm−3; forming hydrogen related donors in the n-type silicon wafer by irradiating the n-type silicon wafer with protons; and annealing the n-type silicon wafer after forming the hydrogen related donors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.