Assemblies having conductive structures with three or more different materials

US10957775B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• David Ross Economy · Boise, US
• Rita J. Klein · Boise, US
• Jordan D. Greenlee · Boise, US
• John Mark Meldrim · Boise, US
• Brenda D. Kraus · Boise, US
• Everett A. McTeer · Eagle, US

Key dates

• Filing date: Jul 1, 2019
• Grant date: Mar 23, 2021
• Expiry date: Jul 1, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/35

Abstract

Some embodiments include a memory array having a vertical stack of alternating insulative levels and control gate levels. Channel material extends vertically along the stack. The control gate levels comprising conductive regions. The conductive regions include at least three different materials. Charge-storage regions are adjacent the control gate levels. Charge-blocking regions are between the charge-storage regions and the conductive regions.