Magnetic tunnel junctions with coupling-pinning layer lattice matching

US10957849B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Lin Xue · San Diego, US
• Chi Hong Ching · Santa Clara, US
• Rongjun Wang · Dublin, US
• Mahendra Pakala · San Jose, US

Key dates

• Filing date: Mar 19, 2019
• Grant date: Mar 23, 2021
• Expiry date: Mar 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

Embodiments of magnetic tunnel junction (MTJ) structures discussed herein employ a first pinning layer and a second pinning layer with a synthetic anti-ferrimagnetic layer disposed therebetween. The first pinning layer in contact with the seed layer can contain a single layer of platinum or palladium, alone or in combination with one or more bilayers of cobalt and platinum (Pt), nickel (Ni), or palladium (Pd), or combinations or alloys thereof, The first pinning layer and the second pinning layer can have a different composition or configuration such that the first pinning layer has a higher magnetic material content than the second pinning layer and/or is thicker than the second pinning layer. The MTJ stacks discussed herein maintain desirable magnetic properties subsequent to high temperature annealing.