Plasma processing apparatus
US10964513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Oct 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a plasma processing apparatus including a processing chamber which is disposed in a vacuum vessel and able to be decompressed, a sample stage on a top surface of which a wafer to be processed is mounted, an opening which is configured to supply a heat-transfer gas to a gap between the wafer and the top surface of the sample stage, a regulator which regulates a flow rate of the heat-transfer gas, and a controller which regulates an operation of the regulator based on a pressure of the gap detected using an amount of the heat-transfer gas leaking from the regulator to the processing chamber through the gap while the wafer is mounted on the sample stage and an amount of the heat-transfer gas supplied from the opening to the processing chamber while the wafer is not mounted on the sample stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.