Patent · US Active

Removing a sacrificial material via sublimation in forming a semiconductor

US10964525B2 · kind B2 · utility

0Cited by
4References
24Claims
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Assignee

Inventor

Key dates

Filing dateDec 19, 2017
Grant dateMar 30, 2021
Priority date
Expiry dateDec 19, 2037

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2201/0109
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

The present disclosure includes apparatuses and methods related to sublimation in forming a semiconductor. In an example, a method may include forming a sacrificial material in an opening of a structure, wherein the sacrificial material displaces a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to sub-atmospheric pressure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.