Multi-step insulator formation in trenches to avoid seams in insulators

US10964599B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Asli Sirman · Boston, US
• Jiehui Shu · Clifton Park, US
• Chih-Chiang Chang · Tucson, US
• Huy Cao · Rexford, US
• Haigou Huang · Rexford, US
• Jinping Liu · Ballston Lake, US

Key dates

• Filing date: Aug 1, 2019
• Grant date: Mar 30, 2021
• Expiry date: Aug 1, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods produce integrated circuit structures that include (among other components) fins extending from a first layer, source/drain structures on the fins, source/drain contacts on the source/drain structures, an insulator on the source/drain contacts defining trenches between the source/drain contacts, gate conductors in a lower portion of the trenches adjacent the fins, a first liner material lining a middle portion and an upper portion of the trenches, a fill material in the middle portion of the trenches, and a second material in the upper portion of the trenches. The first liner material is on the gate conductors in the trenches.