Patent · US Active

Semiconductor device including isolation regions

US10964782B2 · kind B2 · utility

1Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 16, 2019
Grant dateMar 30, 2021
Priority date
Expiry dateDec 16, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/6219
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.