Assemblies which include ruthenium-containing conductive gates
US10964793B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 15, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Apr 15, 2039 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61B2090/0814
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
Some embodiments include a memory cell having a conductive gate comprising ruthenium. A charge-blocking region is adjacent the conductive gate, a charge-storage region is adjacent the charge-blocking region, a tunneling material is adjacent the charge-storage region, and a channel material is adjacent the tunneling material. Some embodiments include an assembly having a vertical stack of alternating insulative levels and wordline levels. The wordline levels contain conductive wordline material which includes ruthenium. Semiconductor material extends through the stack as a channel structure. Charge-storage regions are between the conductive wordline material and the channel structure. Charge-blocking regions are between the charge-storage regions and the conductive wordline material. Some embodiments include methods of forming integrated assemblies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.