Inventor · Boise, ID, US

Ramanathan Gandhi

25Patents
2h-index
21Co-inventors
49Inventor score

Filing activity: Aug 30, 2018 → Nov 10, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US11335788B2 Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices Electricity 2 Active
US10629732B1 Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors Electricity 2 Active
US11658246B2 Devices including vertical transistors, and related methods and electronic systems Electricity 1 Active
US10964793B2 Assemblies which include ruthenium-containing conductive gates Human Necessities 0 Active
US12199182B2 Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors Electricity 0 Active
US11152509B2 Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors Electricity 0 Active
US11695050B2 Assemblies which include ruthenium-containing conductive gates Human Necessities 0 Active
US12218236B2 Devices including heterogeneous channels, and related memory devices, electronic systems, and methods Electricity 0 Active
US11437521B2 Methods of forming a semiconductor device Electricity 0 Active
US12170324B2 Transistors and arrays of elevationally-extending strings of memory cells Electricity 0 Active
US12133383B2 Memory cell and method used in forming a memory cells Electricity 0 Active
US11107817B2 Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies Electricity 0 Active
US11996456B2 Assemblies which include ruthenium-containing conductive gates Human Necessities 0 Active
US11527620B2 Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material Electricity 0 Active
US11515417B2 Transistors including heterogeneous channels Electricity 0 Active
US11832454B2 Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies Electricity 0 Active
US11038027B2 Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material Electricity 0 Active
US12101946B2 Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies Electricity 0 Active
US10998440B2 Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems Electricity 0 Active
US12199183B2 Memory devices including oxide semiconductor Electricity 0 Active
US11476259B2 Memory devices including void spaces between transistor features, and related semiconductor devices and electronic systems Electricity 0 Active
US11329133B2 Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies Electricity 0 Active
US11908913B2 Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices Electricity 0 Active
US11538919B2 Transistors and arrays of elevationally-extending strings of memory cells Electricity 0 Active
US11856766B2 Memory cell having programmable material comprising at least two regions comprising SiNx Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.