Slicing SiC material by wire electrical discharge machining
US10967450B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | May 4, 2018 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Dec 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot includes: supporting the base SiC wafer with a support substrate: and while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.