Composition and method for metal CMP
US10968366B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2018 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Dec 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.