Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
US10971372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2016 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Jun 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a target layer composed of silicon and either (1) organic material or (2) both oxygen and nitrogen, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes exposing the surface of the workpiece to a chemical environment containing N, H, and F at a first setpoint temperature to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature to remove the chemically treated surface region of the target layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.