Inventor · Halfmoon, NY, US

Angelique Raley

56Patents
9h-index
48Co-inventors
74Inventor score

Filing activity: Dec 23, 2011 → Oct 4, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US10354873B2 Organic mandrel protection process Electricity 324 Active
US9786503B2 Method for increasing pattern density in self-aligned patterning schemes without using hard masks Electricity 39 Active
US9673059B2 Method for increasing pattern density in self-aligned patterning integration schemes Electricity 39 Active
US9111746B2 Method for reducing damage to low-k gate spacer during etching Electricity 27 Active
US8906760B2 Aspect ratio dependent deposition to improve gate spacer profile, fin-loss and hardmask-loss for FinFET scheme Electricity 17 Active
US9443731B1 Material processing to achieve sub-10nm patterning Electricity 17 Active
US9171736B2 Spacer material modification to improve K-value and etch properties Electricity 16 Active
US9165765B1 Method for patterning differing critical dimensions at sub-resolution scales Electricity 9 Active
US10727057B2 Platform and method of operating for integrated end-to-end self-aligned multi-patterning process Electricity 9 Active
US8664125B2 Highly selective spacer etch process with reduced sidewall spacer slimming Electricity 8 Active
US10916472B2 Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same Emerging Cross-Sectional Technologies 6 Active
US9748110B2 Method and system for selective spacer etch for multi-patterning schemes Electricity 4 Active
US9257280B2 Mitigation of asymmetrical profile in self aligned patterning etch Electricity 3 Active
US11101173B2 Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same Emerging Cross-Sectional Technologies 3 Active
US11322364B2 Method of patterning a metal film with improved sidewall roughness Electricity 1 Active
US11515203B2 Selective deposition of conductive cap for fully-aligned-via (FAV) Electricity 1 Active
US11915931B2 Extreme ultraviolet lithography patterning method Electricity 1 Active
US10748769B2 Methods and systems for patterning of low aspect ratio stacks Electricity 1 Active
US11164781B2 ALD (atomic layer deposition) liner for via profile control and related applications Electricity 1 Active
US11482454B2 Methods for forming self-aligned contacts using spin-on silicon carbide Electricity 1 Active
US10971372B2 Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks Electricity 1 Active
US10867854B2 Double plug method for tone inversion patterning Electricity 1 Active
US11658038B2 Method for dry etching silicon carbide films for resist underlayer applications Electricity 0 Active
US11127594B2 Manufacturing methods for mandrel pull from spacers for multi-color patterning Electricity 0 Active
US10580660B2 Gas phase etching system and method Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.