High-voltage transistor devices with two-step field plate structures
US10971624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2018 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Aug 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High-voltage transistor devices with two-step field plate structures and methods of fabricating the transistor devices are provided. An example high voltage transistor device includes: a gate electrode disposed over a substrate between a source region and a drain region, a first film laterally extending from over the gate electrode to over a drift region laterally arranged between the gate electrode and the drain region, a second film laterally extending over a portion of the drift region adjacent to the drain region and away from the gate electrode, and a field plate laterally extending from over the first film to over the second film. A first thickness vertically from a top surface of the gate electrode to a bottom surface of the field plate is smaller than a second thickness vertically from a top surface of the portion of the drift region to the bottom surface of the field plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.