An-Hung Lin
13Patents
2h-index
28Co-inventors
50Inventor score
Filing activity: Jun 29, 2009 → Mar 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8508187B2 | Interactive charging management system and method thereof | Emerging Cross-Sectional Technologies | 7 | Active |
| USD1024932S1 | Connector plug | General | 7 | Active |
| US8786362B1 | Schottky diode having current leakage protection structure and current leakage protecting method of the same | Electricity | 2 | Active |
| US8482063B2 | High voltage semiconductor device | Electricity | 2 | Active |
| US9245996B2 | Lateral double-diffused metal-oxide-semiconudctor transistor device and layout pattern for LDMOS transistor device | Electricity | 1 | Active |
| US8829850B2 | Interactive charging management system and method thereof | Emerging Cross-Sectional Technologies | 1 | Active |
| US8587058B2 | Lateral diffused metal-oxide-semiconductor device | Electricity | 1 | Active |
| US8643104B1 | Lateral diffusion metal oxide semiconductor transistor structure | Electricity | 1 | Active |
| US8803235B2 | Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof | Electricity | 0 | Active |
| US8466019B2 | Semiconductor device and bipolar-CMOS-DMOS | Electricity | 0 | Active |
| US8581338B2 | Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof | Electricity | 0 | Active |
| US8058121B2 | Method for fabricating semiconductor device, method for fabricating bipolar-CMOS-DMOS | Electricity | 0 | Active |
| US10971624B2 | High-voltage transistor devices with two-step field plate structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.