Structure and method of forming a semiconductor device
US10971633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Sep 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
In accordance with an embodiment of the present invention, a method of making a semiconductor device includes simultaneously etching a semiconductor layer and a conductive layer to form a self-aligned diode region disposed on an insulating layer, where the semiconductor layer has a first conductivity type. The method further includes etching through first openings of a mask layer to form first implantation surfaces on the semiconductor layer and to form a plurality of projecting regions including conductive material of the conductive layer over the semiconductor layer. The method further includes using the plurality of projecting regions as a part of a first implantation mask, performing a first implantation of dopants having a second conductivity type into the semiconductor layer, to form a sequence of PN junctions forming diodes in the semiconductor layer. The diodes vertically extend from an upper surface of the semiconductor layer to the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.