Sensor mark and a method of manufacturing a sensor mark
US10976196B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2018 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Apr 23, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/7085
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.