System and method for performing lithography process in semiconductor device fabrication
US10976672B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Apr 29, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7061
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.