Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack
US10978234B2 · kind B2 · utility
5Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Feb 15, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Apr 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic stack includes a first element including a ferromagnetic layer; a second element including a metal layer able to confer on the assembly formed by the first and the second elements a magnetic anisotropy perpendicular to the plane of the layers. The first element further includes a refractory metal material, the second element being arranged on the first element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.