Epitaxial growth on semiconductor structures
US10978295B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Jun 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems, apparatuses, and methods related to epitaxial growth on semiconductor structures are described. An apparatus may include a working surface of a substrate material and a storage node connected to an active area of an access device on the working surface. The apparatus may also include a material epitaxially grown over the storage node contact to enclose a non-solid space between the storage node contact and passing sense lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.