Morphology of resist mask prior to etching
US10978301B2 · kind B2 · utility
5Cited by
23References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2018 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Jan 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments provide a patterning process. A photoresist layer is patterned. At least portions of the photoresist layer are converted from an organic material to an inorganic material by a deposition process of a metal oxide. All or some of the patterned photoresist layer may be converted to a carbon-metal-oxide. A metal oxide crust may be formed over the patterned photoresist layer. After conversion, the patterned photoresist layer is used as an etch mask to etch an underlying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.