Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based film
US10978302B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | May 8, 2018 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Oct 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition of a silicon oxide based material is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition, which is complementary to the non-uniform removal of some of the carbon based deposition by the pretuning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.