Patent · US Active

Upper cone for epitaxy chamber

US10978324B2 · kind B2 · utility

0Cited by
30References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 26, 2019
Grant dateApr 13, 2021
Priority date
Expiry dateJan 2, 2040

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/52
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An epitaxial deposition chamber having an upper cone for controlling air flow above a dome in the chamber, such as a high growth rate epitaxy chamber, is described herein. The upper cone has first and second components separated by two or more gaps in the chamber, each component having a partial cylindrical region having a first concave inner surface, a first convex outer surface, and a fixed radius of curvature of the first concave inner surface, and a partial conical region extending from the partial cylindrical region, the partial conical region having a second concave inner surface, a second convex outer surface, and a varying radius of curvature of the second concave inner surface, wherein the second concave inner surface extends from the partial cylindrical region to a second radius of curvature less than the fixed radius of curvature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.