Patent · US Active

Semiconductor device methods of manufacture

US10978373B2 · kind B2 · utility

2Cited by
10References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 1, 2019
Grant dateApr 13, 2021
Priority date
Expiry dateMar 1, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/16195
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.