Semiconductor device and method of forming the semiconductor device
US10978454B2 · kind B2 · utility
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19References
20Claims
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Key dates
| Filing date | Jan 30, 2020 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Feb 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first vertical field effect transistor (VFET) formed on a substrate, and including a first fin and a first gate formed on the first fin, a second VFET formed on the substrate and connected to the first VFET, and including a second fin and a second gate formed on the second fin, and a third VFET formed on the substrate and including a third fin, the first gate being formed on the third fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.