Methods and apparatus to remove epitaxial defects in semiconductors
US10978590B2 · kind B2 · utility
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2References
19Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 30, 2016 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Oct 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus to remove epitaxial defects in semiconductors are disclosed. A disclosed example multilayered die structure includes a fin having a first material, where the fin is epitaxially grown from a first substrate layer having a second material, and where a defect portion of the fin is etched or polished. The disclosed example multilayered die structure also includes a second substrate layer having an opening through which the fin extends.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.