Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
US10985017B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Feb 26, 2019 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Jun 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.