Composition and method for copper barrier CMP
US10988635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2018 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Dec 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including copper, barrier, and dielectric layers includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the copper, barrier, and dielectric layers from the substrate and thereby polish the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.