Patent · US Active

Magneto-resistive structured device having spontaneously generated in-plane closed flux magnetization pattern

US10989769B2 · kind B2 · utility

1Cited by

8References

28Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Juergen Zimmer · Neubiberg, DE
Armin Satz · Villach, AT
Wolfgang Raberg · Sauerlach, DE
Hubert Brueckl · Wiener Neudorf, AT
Dieter Suess · Herzogenburg, AT

Key dates

Filing date	Dec 27, 2013
Grant date	Apr 27, 2021
Priority date	—
Expiry date	Mar 25, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG01R33/098
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A device according to an embodiment may comprise a magneto-resistive structure comprising a magnetic free layer with a spontaneously generated in-plane closed flux magnetization pattern and a magnetic reference layer having a non-closed flux magnetization pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.