Field-to-field corrections using overlay targets
US10990022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Nov 8, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A metrology system may include a controller coupled to a metrology tool. The controller may receive a metrology target design including at least a first feature formed by exposing a first exposure field on a sample with a lithography tool, and at least a second feature formed by exposing a second exposure field on the sample with the lithography tool, where the second exposure field overlaps the first exposure field at a location of a metrology target on the sample. The controller may further receive metrology data associated with the metrology target fabricated according to the metrology target design, determine one or more fabrication errors during fabrication of the metrology target based on the metrology data, and generate correctables to adjust one or more fabrication parameters of the lithography tool in one or more subsequent lithography steps based on the one or more fabrication errors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.