Multi-component conductive structures for semiconductor devices
US10991701B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Sep 9, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Sep 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are methods for forming multi-component conductive structures for semiconductor devices. The multi-component conductive structures can include a common metal, present in different percentages between the two components of the conductive structures. As described example, multiple components can include multiple ruthenium materials having different percentages of ruthenium. In some applications, at least a portion of one of the ruthenium material components will be sacrificial, and removed in subsequent processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.