Multi-state memory and method for manufacturing the same
US10991877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Oct 4, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5615
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A multi-state memory and a method for manufacturing the same. A magnetoresistive tunnel junction is disposed on a spin-orbit coupling layer, and thermal annealing is performed after dopant ions are injected from a side of the magnetoresistive tunnel junction. The concentration of dopant ions in the magnetoresistive tunnel junction has a gradient variation along the direction that is perpendicular to the direction of the current and within the plane in which the spin-orbit coupling layer is located. Symmetry along the direction perpendicular to the direction of the current is broken. In a case a current flows into the spin-orbit coupling layer, resistance are outputted in multiple states in linearity with the current. The multi-state storage is achieved. It can meet a requirement on hardware of neural network synapses, and is applicable to calculation in a neural network.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.