Manufacturing method of semiconductor device
US10991878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2020 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | May 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A manufacturing method of a semiconductor device includes the following steps. A first inter-metal dielectric (IMD) layer is formed on a substrate. A cap layer is formed on the first IMD layer. A connection structure is formed on the substrate and penetrates the cap layer and the first IMD layer. A magnetic tunnel junction (MTJ) stack is formed on the connection structure and the cap layer. A patterning process is performed to the MTJ stack for forming a MTJ structure on the connection structure and removing the cap layer. A second IMD layer is formed on the first IMD layer and surrounds the MTJ structure. The semiconductor device includes the substrate, the connection structure, the first IMD layer, the MTJ structure, and the second IMD layer. The dielectric constant of the first IMD layer is lower than the dielectric constant of the second IMD layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.