Chen-Yi Weng
62Patents
5h-index
58Co-inventors
71Inventor score
Filing activity: Apr 15, 2013 → May 30, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8853015B1 | Method of forming a FinFET structure | Electricity | 9 | Active |
| US9117909B2 | Non-planar transistor | Electricity | 7 | Active |
| US9443757B1 | Semiconductor device and method for fabricating the same | Electricity | 7 | Active |
| US10840432B2 | Semiconductor device and method for fabricating the same | Electricity | 6 | Active |
| US9530871B1 | Method for fabricating a semiconductor device | Electricity | 6 | Active |
| US11063206B2 | Semiconductor device and method for fabricating the same | Electricity | 4 | Active |
| US10707412B2 | Semiconductor device and manufacturing method thereof | Electricity | 2 | Active |
| US9666715B2 | FinFET transistor with epitaxial structures | Electricity | 2 | Active |
| US11706996B2 | Magnetoresistive random access memory | Electricity | 2 | Active |
| US10727397B1 | Magnetoresistive random access memory cell | Electricity | 2 | Active |
| US9673053B2 | Method for fabricating semiconductor device | Electricity | 1 | Active |
| US12029139B2 | Magnetoresistive random access memory | Electricity | 1 | Active |
| US11387408B2 | Magnetoresistive random access memory and method of manufacturing the same | Electricity | 1 | Active |
| US11139011B2 | Semiconductor structure and method for forming the same | Electricity | 1 | Active |
| US11818965B2 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
| US10991878B2 | Manufacturing method of semiconductor device | Electricity | 1 | Active |
| US11005030B2 | Magnetoresistive random access memory | Electricity | 1 | Active |
| US11864468B2 | Magnetoresistive random access memory | Electricity | 1 | Active |
| US11849648B2 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
| US11018184B2 | Magnetoresistive random access memory with particular shape of dielectric layer | Electricity | 1 | Active |
| US10978391B2 | Connection structure of semiconductor device and manufacturing method thereof | Electricity | 1 | Active |
| US12029044B2 | Semiconductor structure and method for forming the same | Electricity | 1 | Active |
| US11637233B2 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
| US11139428B2 | Magnetoresistive random access memory | Electricity | 1 | Active |
| US11508904B2 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.