Method of programming memory device and related memory device

US10998049B1 · kind B1 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Wenzhe Wei · 红钢城街道, CN
• Hongtao Liu · San Diego, US
• Kaikai You · 红钢城街道, CN
• Da Li · 红钢城街道, CN
• Ying Huang · 红钢城街道, CN
• Yali Song · 红钢城街道, CN
• Dejia Huang · 红钢城街道, CN

Key dates

• Filing date: Dec 5, 2019
• Grant date: May 4, 2021
• Expiry date: Dec 5, 2039

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C16/32
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

In a memory device which includes a plurality of memory cells, a top dummy storage region, a bottom dummy storage region, a plurality of word lines and a plurality of bit lines form in a substrate, a selected bit line among the plurality of bit lines, a channel region in the substrate and a source region in the substrate are pre-charged and a negative pre-pulse voltage is applied to the bottom dummy storage region during a first period. A selected memory cell among the plurality of memory cells is programmed during a second period subsequent to the first period, wherein the selected memory cell is coupled to the selected bit line and a selected word line among the plurality of word lines.