Etching method and etching apparatus
US10998199B2 · kind B2 · utility
0Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2019 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Mar 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided an etching method including: a first gas supply step of supplying a reducing gas to a workpiece having a metal film formed thereon to reduce a front surface of the metal film, the workpiece being accommodated in at least one processing chamber; and subsequently, a second gas supply step of supplying an oxidizing gas for oxidizing the metal film and an etching gas composed of a β-diketone to etch the oxidized metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.