One transistor and ferroelectric FET based memory cell
US10998339B2 · kind B2 · utility
3Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2016 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Dec 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Described herein are ferroelectric memory cells and corresponding methods and devices. For example, in some embodiments, a ferroelectric memory cell disclosed herein includes one access transistor and one ferroelectric transistor (1T-1FE-FET cell). The access transistor is coupled to the ferroelectric transistor by sharing its source/drain terminal with that of the ferroelectric transistor and is used for both READ and WRITE access to the ferroelectric transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.