Semiconductor device

US10998433B2 · kind B2 · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• Toshiba Electronic Devices & Storage Corporation · JP

Inventors

• Hung Hung · Yokohama, JP
• Yasuhiro Isobe · Kyoto, JP
• Akira Yoshioka · Yokohama, JP
• Toru Sugiyama · Abiko, JP
• Masaaki Iwai · Kawasaki, JP
• Naonori Hosokawa · Yokohama, JP
• Masaaki Onomura · Tokyo, JP

Key dates

• Filing date: Sep 3, 2019
• Grant date: May 4, 2021
• Expiry date: Nov 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

A semiconductor device of an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer placed on the first nitride semiconductor layer; a first electrode placed on the second nitride semiconductor layer; a second electrode placed on the first nitride semiconductor layer; a gate electrode placed between the first electrode and the second electrode; a first field plate electrode placed on the second nitride semiconductor layer, the first field plate electrode having the same height as the gate electrode; and a second field plate electrode provided on an upper side of the first field plate electrode, the second field plate electrode being placed on a side of the second electrode compared to the first field plate electrode.