One selector one resistor RAM threshold voltage drift and offset voltage compensation methods
US11004508B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Aug 30, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Aug 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory system is provided that includes a first memory array including a first memory cell, a second memory array including a second memory cell, and a memory controller configured to determine a threshold voltage of the second memory cell to compensate a drift of a threshold voltage of the first memory cell and/or determine an offset voltage of the second memory cell to compensate an offset voltage of the first memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.