Low temperature sub-nanometer periodic stack dielectrics
US11004612B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Jun 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
MIM capacitors using low temperature sub-nanometer periodic stack dielectrics (SN-PSD) containing repeating units of alternating high dielectric constant materials sublayer and low leakage dielectric sublayer are provided. Every sublayer has thickness less than 1 nm (sub nanometer). The high dielectric constant materials could be one or more different materials. The low leakage dielectric materials could be one or more different materials. For the SN-PSD containing more than two different materials, those materials are deposited in sequence with the leakage current of the materials from the lowest to the highest and then back to the second-lowest, or with the energy band gap of the materials from the widest to the narrowest and then back to the second widest in each periodic cell. A layer of low leakage current dielectric materials is deposited on and/or under SN-PSD. The dielectric constant of SN-PSD is much larger than that of the component oxides and can be readily deposited at 250° C. using atomic layer deposition (ALD). The ALD deposition cycle could be 20-1000 cycles. The deposition technology is not limited to ALD, could be thermal oxidation, chemical vapor deposition (CVD),…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.