Process chamber for cyclic and selective material removal and etching
US11004661B2 · kind B2 · utility
1Cited by
3References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 13, 2016 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Sep 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for substrate etching are described herein. A processing chamber described herein includes a source module, a process module, a flow module, and an exhaust module. An RF source may be coupled to the chamber and a remote plasma may be generated in the source module and a direct plasma may be generated in the process module. Cyclic etching processes described may use alternating radical and direct plasmas to etch a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.