Patent · US Active

Temperature controlled spacer for use in a substrate processing chamber

US11004662B2 · kind B2 · utility

0Cited by
8References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 14, 2017
Grant dateMay 11, 2021
Priority date
Expiry dateJun 18, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/3321
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.